Design Of C-band Microwave Power Amplifier

With the development of wireless communication technology,an increasingly high requirement for the utilization of frequency resource and signal bandwidth is proposed,and 3G/4G mobile communication service is mainly used in L/S band,with the increasing number of communication users,the communication throughput and other issues also put forward higher requirements,so it is necessary to develop the communication infrastructure in the higher frequency band.In the field of wireless communication,microwave power amplifier possesses an important role.The microwave power amplifier amplifies the input signal power to the power required by the transmitter,its performance determines the distance and quality of wireless communication and other issues.This paper focuses on the design of a C-band power amplifier based on GaAs/GaN tube and the design index of frequency 5300MHz~5500MHz,output power greater than equal 37 dBm,input power is 0dBm,the power gain is greater than equal to 37 dB,gain flat degree to ±1dB,input and output VSWR ratio is less than or equal to 1.5.The design of the whole circuit comprises a control circuit and the radio-frequency circuit,control circuit includes a bias circuit design,power circuit design,the design of temperature compensation and the power to detect design,compared to a separate research on RF circuit and the subject of control circuit design is a new point.In the process of design of microwave power amplifier,the overall design and simulation of RF circuit by using the simulation software,design the PCB layout using Altium Designer software,and simply design of the cavity appearance by the CAD.Finally,complete the physical production of the control panel and microstrip coupler,and test and summarize the operation process,and provide some reference value for the future engineering practice.