| With the development of wireless communication,our country has entered the era of the fourth generation of mobile communications(4G).Although 5G technology will become the mainstream technology of the telecom industry in the near future,the market will still coexist with 3G and 4G in a long period of time.The demand for monolithic integrated radio frequency chips is increasing,which requires the transceiver to support multiple modes and multiple standards of communication.Therefore,multimode and multi standard application is a worthwhile research direction.The power amplifier is an important part of the transmitter,its power consumption accounts for the energy consumption of 80% of the transmitter.Therefore,it is significant to study the high efficiency power amplifier.In order to achieve high efficiency,a two grade differential class E power amplifier is designed by using GF 0.13?m SiGe BiCMOS process.The drive level works in the class AB state,providing a large enough signal for the power level to ensure it can work in the class E state normally.The maximum output voltage of the traditional class E power amplifier will reach 3.57 times of the power supply voltage.In order to reduce the risk of transistor breakdown,the cascode circuit structure is adopted in the power level.For the designed power amplifier is a broadband amplifier,an improved differential finite inductance load transformation network is adopted in the load transformation network of the power amplifier,which improves the broadband performance.Considering the negative feedback problem of wire bonding in emitter of HBT,this paper uses Trough Silicon Vias(TSV)technology to replace the traditional Ground pad.By directly opening the hole inside the chip,the transmitting level is directly connected with the outside,which greatly reduces the impedance and inductance value of the transmitting stage,and ensures the high frequency gain and efficiency of the amplifier.In addition,the stability analysis and the matching circuit design of the power amplifier are given in this paper,also the results of the pre simulation and the post simulation are given.The simulation results show that: in the 1.75-2.75 GHz band,the power amplifier is unconditionally stable,the circuit stability coefficient is greater than 22,the S11 is less than-15 dB in the frequency band,shows that the input matching performance is good.The output power is more than 26 dBm,the power gain is more than 21 dB,the PAE is more than 50%,and the peak efficiency reaches 60%.The power amplifier designed in this thesis covers the mainstream 3G and 4G frequency bands of mobile communication and short distance wireless communication system,and achieves high efficiency.It can be applied in mobile communication devices such as mobile phones,palmtops and other mobile communication equipment,meet the requirements of low power wireless communication.In the application of high linearity,we can combine linearization technology,such as envelope elimination and recovery technology,envelope tracking,to improve the linearity of power amplifier and improve the overall performance. |
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