Design And Implementation Of High Efficiency And Multi-carrier Power Amplifier Based On GaN Power Amplifier Transistor

Recent years,with the rapid development of the communications,multi-carrier,wide bandwidth and high data transfer become significant symbol in mobile communication.Therefore the 4.5G communication will be deployed in the B41 frequency band.The B42 frequency band is valued for the consequence in the low-frequency stage of the fifth generation communication.RF power amplifier units are indispensable for products of these bands.Dual-frequency power amplifier utilized in micro power stations is achieved in this work.The RF power amplifier circuit is available for base station equipment of 5W power output in the B41 and B42 frequency band.The application extends in RF power amplifier circuit of power output of 7 W with wide bandwidth of 100 MHz.In this article,work completed by the designer is as follow:(1)To complete the design and developing of the power amplifier of the dual-band micro power stations in Band 42 and Band41.This work has been validated using GaN amplifier transistor CGHV27015 S and CGHV27030 S of CREE based on1:2 asymmetric Doherty and derived structure with high performance.The saturation power of the device is higher than 46 dBm.The power amplifier get high efficiency of 40% at the rated power output.5 carriers and 20 LTE broadband signals can be accompanied and amplified by this design.ACLR is lower than-48 dBc which is design objective of the article through digital predistortion correction.Within the bandwidth,the circuit gain maintains higher than 40 dB with in-band flatness no more than 2.5dB,while the switching time is less than 3?s.(2)To complete the design of asymmetric Doherty circuit consist of CGHV27015 Sand CGHV27030S.First of the design,these two component are simulated respectively.Then the combiner is simulated also.The last,the associated circuit of the three components has been simulated then the kernel part of the whole work has been accomplished.(3)To complete function and performance test matched with the design requirement and applicant for whole machine products.A power amplifier of high efficiency multi-carrier in Band 41 and Band 42 based on GaN amplifier transistor is presented in this article.This design meets the all requirements of LTE multi-carrier aggregation,256 QAM,output power of 7 W at the relevant frequency while the application will find its way in antenna array of 4.5G and approaching 5G communication to get the progress of high rate and high reliability of communication device in the future mobile communication.