Research On High Efficiency Power Amplification Technology Of 2-10GHz

The main purpose of the thesis aims at studying a2-10GHz high-efficiency power amplification. A research and demonstration in broadband amplification is described first. Three multi-octave power amplifiers utilizing reatcive matched amplifier, RLC matched amplifier and distributed amplifier are designed and realized, respectively. Broadband amplifier can obtain an output power level meet the requirement of power amplification by applying the GaN based discret devices. The measurement results show that the saturated output power of the power amplifiers are all above39dBm with bandwidth of1-2GHz,0.5-3.5GHz and0.3-2.5GHz, respectively. In order to achieve a multi-band bandwidth with good reflect coefficiency in2-10GHz frequency range, the distributed amplifier is adopted. Three GaN HEMTs (High Electron Mobility Transistor) are utilized to form the artificial transmission lines. The design applys tapered drain line and nonuniform series gate capacitors to obtain a high efficiency in the multi-octave frequency band. According to the simulation result, the broadband power amplfier provides a linear gain of8.9dB from2to10GHz with saturated output power above40.5dBm. The PAE is higher than16%. The power amplifier is fabricated with the printed circuit board (PCB) and thin flim resistors.