Research On High Voltage Of 600V MOSFET Device Technology

High voltage MOSFET is the heart of efficient power conversion and control,and has a wide range of application needs and prospects.It is mainly used in power processing and power conversion circuits with high voltage blocking,in control power supply and intermediate frequency power in source,servo drive,DC/DC and AC/DC module power supply and inverter are widely used.Because the domestic discrete devices,especially the field effect tube development and production level lag behind the foreign countries for a long time,the main reason lies in the terminal structure design and technology level.With the improvement of the technology level of some large scale IC foundries in China,the gap with foreign technology level has been narrowed.Through years of development and research,the terminal design has a certain theoretical basis and practical experience,making China has made great process in the field of high-voltage MOSFET.At present,the dosage of the product is bigger,the user chooses more than 600 V high voltage MOSFET products can only purchase existing products abroad,purchasing cycle is long,the price is high,and there is always the risk on the embargo,this thesis aims to develop autonomous and controllable products and guide users to design and select models in use.This thesis mainly aimed at the product of IXYS company's IXTM20N60,combined with the base theory of high voltage MOSFET device,the purpose of this paper is to develop on the high reverse breakdown voltage up to 600V,current up to 20A and R_on?0.35?.By the process of simulation,carry out high voltage MOSFET devices terminal structure design and process technology research,designed the basic structure of the product,draw the map data,complete the mask cost of production,through multiple flow experiment,demonstrate a complete set of high voltage MOSFET device process of the production process.The key process was tested to realize the technology of ring sidewall corrosion and high quality gate oxidation development of high voltage planar gate MOSFET device structure.