Schmitt Trigger Circuit Optimization And Application Of Research In The SRAM

With the rapid development of integrated circuit technology,traditional CMOS transistors have encountered some problems such as short channel effect in size reduction,and FinFET,as a new type of device,has been proposed,providing an effective way to solve the problems such as short channel effect.This thesis mainly analyzed several optimized Schmitt trigger circuits,applied Schmitt trigger circuit to SRAM,and designed a 10 T SRAM unit circuit based on Schmitt trigger,then proposed an optimized based on FinFET Schmitt trigger circuit,and its application to the SRAM,designed a new type of 11 T SRAM cell circuit based on FinFET.Through the analysis and simulation test of the Schmitt trigger circuit based on CMOS,we can find its poor performance in terms of delay and anti-noise.Thus several optimized Schmitt trigger circuit designs are proposed and analyzed in detail.The Schmitt trigger is applied to SRAM,a 10 T SRAM unit circuit based on Schmitt trigger is designed,and HSPICE simulation is carried out for various performances of the designed circuit.The results show that the performance parameters of ST 10 T SRAM are better than those of CMOS 6T SRAM in terms of write margin,delay,power consumption,leakage current and noise margin.With FinFET device instead of traditional MOS tube based on the Schmitt trigger circuit FinFET,on the basis of adding a sleep transistor,and an optimization method based on FinFET Schmitt trigger circuit,apply it to the SRAM design a new type based on FinFET 11 T SRAM cell circuit,through the simulation test shows that in addition to hold noise margin is slightly lower than the traditional ST 10 T SRAM cell circuit.It is sup erior to the traditional ST 10 T SRAM unit circuit in terms of power consumption,average delay,leakage current,write margin and read noise margin,which reflects the practical significance of the optimized Schmitt trigger circuit in SRAM application.Figure [86] table [7] reference [32]...