A Study On Irradiation Effects Simulation And Modeling Of FinFET SRAM

In pace with the speedy development of national defense as well as military cause, it becomes a more and more complicated and extensive phenomenon that nuclear radiation is posing significant impact on the environment, simultaneously reliability of devices and systems are taken more and more seriously. From a long-term perspective, Radio-resistance matter is inevitably becoming the basis of overall electronic technology, and it will exert profound influence on overall electronic technology. For example, from the very beginning of researching and developing new electronic devices, radiation issue shall be considered. Also it is a necessity to consider elevating the radio-resistance capability in the initial phase of designing whole electronic system. These would become principles of future electronic system design. However, owing to the difficulties to acquire miscellaneous actual radiation environments under laboratory condition, it is necessary to penetrate into the research of simulation against irradiation effect, on purpose of resolving those issues which cannot be addressed via actual experiments. These simulation results can be essential references for devices or systems design.This article has researched irradiation effect via simulation of Total ionizing dose effect, Single event upset effect, Transient irradiation effect, and come up with outcomes below:1.In this article, we briefed the structure of SOI Fin FET device and simulated it via Silvaco TCAD. Also we have researched the impact of irradiation dosage on device threshold voltage, and compared threshold voltage drift extent differences between wide-Fin and narrow-Fin devices under same irradiation dosage. Simulation conclusions show:(1) Device threshold voltage drift phenomenon becomes obvious when irradiation dosage is around 200kard(Si), and it becomes mild while irradiation dosage exceeds 400kard(Si);(2) When irradiation dosage reaches 200kard(Si), threshold voltage of devices has significant drift for wide-Fin devices, which is almost 4 times of narrow-Fin devices.2.In this article, we have researched on the mechanism of single event upset, collection mode of charges, as well as simulation of single particle turnover on basis of SOI Fin FET devices. We have got the drain electrode currency change in accordance with time, based on which, we have got the instantaneous currency pulse expression of Single event upset effect, by means of numerical value fitting, with the classic di-exponential model as prototype. Then we input it into Cadence software and perform Single event upset effect circuit simulation of 6T SRAM memory cell, and come up with the outcome that, LET threshold range for triggering turnover effect of memory cell, is from 40 Me V·cm2/mg to 50 Me V·cm2/mg.3.In this article, we have distinguished transient radiation effect from single particle effect, and briefed the runtime environment, functionality, structure of Monte Carlo kit Geant4. Also we have performed secondary development aiming at transient radiation effect. We have assumed the currency pulse model produced by transient radiation effect, input it into Cadence software, as well as performed transient effect simulation of 6T SRAM memory cell, and we have acquired the currency peak threshold as 0.991 m A which triggers the turnover. Afterwards, by utilizing the assumed currency pulse model, we have got the “particle quantity threshold” of SOI Fin FET when proton, negative electron, and X-ray are separately discharged at SOI Fin FET from forward and backward directions, we have thereby come to the conclusion that, for negative electron transient radiation, backside consolidation is stronger than front one. Then we have compared the transient radio-resistance capability between SOI Fin FET structure and crystalline silicon Fin FET structure, and come to the conclusion that, transient radio-resistance capability of SOI Fin FET structure is much stronger than crystalline silicon Fin FET structure. Eventually, we have elaborated and explained the currency pulse model produced by transient radiation effect, which is assumed in this article, by considering the actual particle discharging situation, as well as dual-pole amplification effect of device itself.