Reliability Of Nano Mos In Strong Electromagnetic Environment

With the rapid development of science and technology,the more and more complicated electromagnetic environment has brought greater impact on electronic systems.The new concept electromagnetic weapons has also been greatly applied to modern warfare.In addition,with the rapid development of the microelectronics industry,from the introduction of Moore's Law to the current nanoscale integrated circuits,the feature size of microelectronic devices is getting smaller and smaller,meanwhile,the sensitivity to the electromagnetic environment becomes greater,and the electromagnetic pulse is more vulnerable to damage.Therefore,as a basic component of an electronic device,it is necessary to theoretically study the damage process of a MOS device under the action of a strong electromagnetic pulse,thereby improving the anti-interference ability of the electronic device against a strong electromagnetic pulse.In this thesis,nanometer NMOS devices were studied by Sentaurus-Tcad software.In the simulation process,the problem of device size was taken into account,and a quantum theory model was added for simulation.First of all,through the simulation of the output characteristics of nano-NMOS devices,compared with the feature sizes.is 0.2 microns NMOS devices,it is found that after entering the saturation region,the leakage current of nano-NMOS will still increase significantly with the increase of the applied voltage.Then its breakdown characteristics were verified.Next,by injecting the step pulse voltage at the drain,the damage of the device under the electromagnetic pulse is simulated.The simulation results show that under the electromagnetic pulse injection,the hot spot of the nano NMOS device is distributed at the drain and the substrate junction.The burn-out time of nanoNMOS devices is directly proportional to the magnitude of the injection voltage at the drain,and the energy absorbed by the nano-NMOS devices during the burn process is positively correlated with the burn-in time.At the same time,the influence of the external circuit on the burn-in time is studied.In the same situation,the source-level external resistance is shorter than the burn-out time of the external resistor of the drain.For High Power Microwave implantation,by injecting a sinusoidal pulse voltage at the drain,it was found that the hot spot and negative half cycle of the nano-NMOS device are different in the positive half cycle,the device is mainly burned in the positive half cycle,and the internal temperature curve of the device is different when the electromagnetic pulse is different.There is a tendency of rising,falling,and rising as a whole,in which the temperature rise within the positive half cycle is significantly higher than the negative half cycle.Based on the change of the internal temperature of the device under the action of electromagnetic pulse,the device temperature shows a conductive heating process under the action of High Power Microwave.Finally,by injecting sinusoidal pulse voltages of the same amplitude and different frequencies at the device's drain,it is found that the device's burn time and injection frequency are positively correlated.In this thesis,the research contents will offer guidence to the protection of nano MOS devices in strong electromagnetic pulse environment,at the same time,it can draw on the experience of practical experiments.