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Design And Analysis Of TSV-Based 3-D ICs And Passive Devices

Posted on:2020-08-05Degree:MasterType:Thesis
Country:ChinaCandidate:J W PanFull Text:PDF
GTID:2428330572468410Subject:Electronic Science and Technology
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In order to continue or even go beyond Moore's law,3D integration technology began to emerge.As a key technique in 3D integrated circuit(3D IC),through-silicon-vias(TSVs)can realize vertical interconnection with high aspect ratio.Therefore,the interconnection length of the whole system can be significantly reduced and the integration level of the system can be improved.With the increase of system integration,the problem of power integrity become more and more obvious.Under such circumstances,it is necessary to investigate the impacts of the TSVs on signal transmission in 3D ICs.Moreover,the electrical characteristics of the 3D power distribution network(PDN)should be evaluated exactly and quickly.To this end,this thesis develops the circuit model of TSVs and PDN in 3D IC,and also design passive devices based on redundant TSVs.The thesis can be mainly divided into three parts:In the first part,the parasitic parameter extraction of TSVs is conducted,with the influences of skin effect and depletion layer width treated appropriately.Aiming at the noise problem caused by the increasing frequency,the crosstalk issue between pairs of differential TSVs is studied.Moreover,the electrical characteristics of pairs of differential TSVs are analyzed in both time and frequency domains.The second part develops wideband circuit models of on-chip power/ground network and TSV arrays in the 3D PDN.Based on the unit structure of the power/ground network,we develop an equivalent circuit model,which is valid from DC to 100 GHz.At the same time,the influences of the design parameters on the PDN impedance are investigated.The relevant findings are helpful for the design and optimization of 3D PDN.The third part is devoted to the design of an ultra-compact low-pass filter based on redundant TSVs.The vertical spiral TSV inductor and on-chip metal-insulator-metal(MIM)capacitor are combined to form the ultra-compact filter.The equivalent circuit model of such filter is developed,with the simulation results verified by commercial software HFSS.In summary,this thesis studies the electrical characteristics of the differential TSVs and PDN in 3D ICs,and attempts to design passive components by using redundant TSVs.
Keywords/Search Tags:Through-silicon via(TSV), Three dimensional integrated circuits(3D ICs), Differential signals, power distribution network(PDN), filters
PDF Full Text Request
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