Material Implication-Based Memristive Logic Array Design And Functional Implementation

As a new kind of nonvolatile storage devices,memristor is considered as the fourth basic element in circuits.Because of its excellent performance such as nonvolatile resistance switching,high operation speed,low power consumption,good endurance,easy integration and compatible with CMOS circuits,memristor becomes the most promising candidate of next-generation memory.In recent years,memristor-based nonvolatile logic operations have been put forward,the fresh stateful logic offers a new way to realize logic operations which is utterly different with conventional voltage-based CMOS logic circuits,combines information storage with computing,and breaks through von Neumann‘s bottleneck,hopefully makes memristor become the core device in building information processing architecture in the future.This work was under the research of memristor-based logic circuits,took the primitive material implication?IMP?logic as the basic algorithm,studied the conventional WL-IMP logic circuit and its implementation in the memristive crossbar array.At the same time,another way to realize IMP logic operation in array called BL-IMP was researched and proposed,and a memristive logic array combining two kinds of IMP logic operations was designed.Moreover,?straight line?logic operation mode and?broken line?logic operation mode were referred.In the array,the whole information processing which contains writing in,reading,logic computing and storing can be realized.Then using a 2×2 fabricated Ti/HfO₂/W memristive array,NAND logic and data transfer function were experimentally achieved with two IMP logic operations,and XNOR logic and one-bit full adder function were verified by HSPICE simulation,which demonstrated the feasibility of the IMP-based memristive crossbar array to realize all compound logic functions.During the logic operation,the realization of complex logic function will be of great flexibility with the help of?straight line?logic operation mode and?broken line?logic operation mode,and the usage of the computing resources can be improved because every available memristor in the array could be used to compute and store information.At last,the sneak current issue in the array was discussed,and a solution which utilized the one-diode-one-memristor?1D1R?structure was given to avoid it in theory,so that the number of wrong logic operations would be less and the bit error rate would be decreased,which improved the performance of the memristive logic array.The design of IMP-based memristive logic array is the extension and a practical application of conventional IMP logic research,providing another choice to build non von Neumann logic-in-memory systems.