Research On Electrothermal Simulation Of Resistive Random Access Memory

With the advancement of science and technology and the development of information technology,the importance of memory in modern society has become increasingly prominent,and the market demand for data transmission,data processing,and other aspects has continued to grow.Traditional flash memory has encountered scalability and storage capacity,power consumption and many other bottlenecks.The new non-volatile memory gradually occupies an important position in the memory field with its superior performance.Among them,the resistance change memory(RRAM)has fast erasing and writing speed,high storage density,high number of repeated erasing,multi-value storage and three-dimensional storage potential,etc.Many advantages have aroused widespread concern in the academic community.However,at present,the resistance change mechanism of RRAM devices is not clear.In addition,in high-density integrated arrays,thermal crosstalk has an important impact on the resistance transition characteristics of RRAM devices,which is directly related to the resistance retention characteristics,erasing and writing characteristics,and may even cause the loss of device memory contents,which is worth studying.In this paper,the resistive switching mechanism of the resistive memory and the thermal crosstalk in the three-dimensional cross-array are studied theoretically by the finite element method.In this paper,the finite element modeling and analysis of the 1S1 R three-dimensional cross array is first performed,and the thermal crosstalk phenomenon is systematically studied.The transient thermal effects of 1R and 1S1 R structures are compared,and the effects of cell pitch,material parameters,operating current,and gate resistance on thermal crosstalk in the array are studied.It is found that as the cell pitch decreases,Thermal crosstalk will become more serious.Increasing the thermal conductivity of the isolation material,reducing the RESET current,and increasing the low-resistance state resistance of the gate are all conducive to reducing the thermal crosstalk between the arrays and optimizing the 1S1 R structure of the RRAM array Provided the basis.An electrothermal model of oxygen vacancy coupling is also established in this article.The resistance change process of a single RRAM device is simulated.The mechanism of resistance transition is explained from various aspects such as electric field,temperature,and oxygen vacancy migration.The curve verifies the rationality of the oxygen vacancy resistance theory.