Research On Transparent Resistive Random Access Memory Device

In recent years, in order to adapt to the development trend of transparent electronics industry, more and more new transparent electronic devices have received the extensive concern of the industry. Among these transparent devices, resistance random access memory device, which as the most promising high-integration and non-volatile storage device, brought infinite possibilities for new transparent storage devices, thus promoting the transparent resistance random access memory, which has high transparency in the visible region, gradually extending to scientific research field.Transparent resistance random access memory device has been mainly researched in this paper. Firstly, this device has been introduced about its basic concept and related properties, including the basic component and structure, the current-voltage characteristics, feature and mechanism of the resistive transition. And based on the theory of this device, a boundary migration model of transparent resistance random access memory device has been set up. Then the correlation materials composition for device have been introduced.Based on the basic theory of this device, two different transparent resistance random access memory devices of ITO/WOX/ITO and Ag/IGZO/ITO have been respectively fabricated to detailed test and research. First of all, ITO/WOX/ITO transparent resistance random access memory device has been introduced about the structure and preparation process, and then tested its various performance indicators through the Keithley 4200-SCS parameter tester at room temperature, thus illuminating the mutual conversion phenomenon between the high and low resistance state and its resistive transition mechanism of conductive filament. Simultaneously, its storage features and reliability also have been analyzed by testing, including repeatable programming, resistance reading endurance and resistance retention, etc. In addition, since this device has a storage window of three orders, it has been further discussed the multivalued storage characteristic. And then tested and analyzed the characteristical reliability, the ITO/WOX/ITO transparent resistance random access memory device has been confirmed that it not only has good storage features and reliable stability, but also has multivalued storage characteristic that can realize mult-data storage performance. Afterwards, the Ag/IGZO/ITO transparent resistance random access memory device has been studied about its storage characteristics and reliability through the same tests. While Ag/IGZO/ITO device has been much less than the ITO/WOX/ITO device on the repeatable programming feature, but it has been showed good stability about the resistance reading endurance above 1 billion times and resistcance retention more than 105 s, so that it has more advantages on the application of nondestructive reading and data storage retention.Meanwhile, the analog-to-digital(Analog-to-Digital Converter, ADC) technique which is based on the transparent resistance random access memory device also has been researched in this paper. Combined with the basic principle of comparator and utilized the threshold characteristic of bipolar transparent resistance random access memory, a comparator structure based on transparent resistance random access memory has been proposed in this paper. Then the comparator has been used to Flash ADC and SAR ADC respectively, thus setting up the types of parallel ADC and serial ADC based on the transparent memory device, providing a new idear for industrialization of transparent resistance random access memory device in the future.