Study And Design Based On New Type Carbon- Based Field Effect Transistor And Its Application Circuit

In order to investigate the electrical properties of n-i-n type field-effect transistorsbased on carbon,a quantum model is adopted based on non-equilibrium Green's function(NEGF)and Poisson equation with self-consistent solution.We research the electrical properties of CNTFETs and GNRFETs which are based on the channel engineering technology and the gate engineering technology.Then,choose the device of the optimal performance apply into the circuit,using the SPICE with look-up table based on Verilog-A models to research the electrical properties.Through the research of this subject,it can provide theoretical basis for future carbon-based devices and circuit design.The main work of this paper can be summarized as follows:Firstly,we study the HMG-DG-GNRFET and compare with other related structures.The results show that this new structure can reduce the off-state current,thus increasing the switching current ratio Ion /Ioff,and sub-threshold swing is also reduced.Compare with the device of general structure HMG-DG-GNRFET has lower delay time and higher voltage gain.Secondly,we research electrical characteristics of n-i-n HMG-DG-CNTFET structure and compare with other related structures.We find that this new structure can also reduce the off-state current,and better current ratio Ion/Ioff which suppresses the short channel effect.Finally,this paper uses Verilog-A to establish the look-up table(LUT)model on the basis of the transfer characteristics of the devices,and construct the corresponding circuit in SPICE to analyze its electrical characteristics and compare with other circuit.In the circuit level,we mainly explore performance of the device in the inverter circuit and memory circuit.For the inverter constructed by HMG-DG-GNRFET,the results show that the inverter constructed by HMG-DG-GNRFET has a smaller power consumption delay product(PDP).Secondly,this structure is used in the design of the classic 6T memory circuit,and compared with the memory circuit constructed by C-GNRFET,it is shown that the SNM value of H-G-GSRAM circuit is larger than that of CGSRAM.That is to say,HMG-DG-GNRFET has a better stability.The circuit characteristics of two input and gate and two input or gate logic circuits based on HMG-DG-CNTFET are studied.The results show that the introduction of heterogeneous gate gradient doped structure not only does not affect the correctness of the logic circuit,but also effectively reduces the delay,power consumption and PDP.