Study On Displacement Damage Equivalence Of Different Structure Bipolar Transistors

In this paper,NPN and PNP vertical transistors,GLPNP lateral transistors,and GSPNP substrate transistors are used as research subjects.Protons,Si ions,C ions,and O ions are selected as the radiation sources.By analyzing the degradation laws of electrical properties and the evolution law of displacement damage defects,combined with the SRIM simulation method,revealing the equivalence laws of displacement damage of different structures of bipolar transistors are revealed.The experimental results show that the ?(1/?)after 10 Me V,40 Me V Si,25 Me V C,and 25 Me V O ions cannot be equivalent in both NPN and PNP vertical transistors.In the GLPNP lateral transistor and the GSPNP substrate transistor,the?(1/?)after the irradiation of the three kinds of radiation sources can be equivalent.The displacement damage sensitive area of GLPNP lateral transistor is Si/Si O2interface;the displacement damage sensitive area of GSPNP substrate transistor is Si substance.Based on the DLTS analysis,the evolution law of displacement defects of five kinds of radiation sources in four types of transistors was studied.Numerous experimental studies have shown that in the NPN transistor,no new types of defects have appeared after irradiation with 3Me V protons.However,after irradiation with40 Me V Si ions,the concentration of VO(-/0)and V2(=/-)defects decreases and the concentration of V2(-/0)defects increases at larger fluences.There is a VP center defect.In the PNP transistor,no new type of defects appeared after 10 Me VSi ions irradiation.However,after irradiation with 40 Me V Si ions,a new type of defect appears in the transistor.After 25 Me V C ions irradiation,there are two new types of defects in the transistor.In the GLPNP and GSPNP transistors,no new types of defects were generated after irradiation of the three types of radiation sources.By comparing the variation of the electrical properties of the four structural transistors after irradiation with the five kinds of irradiation sources and the evolution law of displacement defects,it is found that in the NPN transistor,the defect of the low energy level is converted into a deeper level and the occurrence of the VP heart is not equivalent.The main reason.In the PNP transistor,a new type of vacancy defect appears to be the main reason that cannot be equivalent.