Influence Of Hydrogen And Electric Field On 3MeV Proton Irradiation Damage Of Gate-controlled Bipolar Transistors

In this paper,the gated lateral bipolar transistor(GLPNP)is studied.Based on the3 Me V proton irradiation,in-situ electrical performance tests(Gummel,GS,etc.)and defect test analysis(DLTS)at different fluence points are used to clarify the differences.Under the conditions of performance changes,the effects of different hydrogen soaking conditions,different gate voltage conditions and junction bias conditions are systematically studied.The experimental results show that under 3 Me V proton irradiation,the increase of the base current and the degradation of the GLPNP transistor are caused by both ionization effect and displacement effect.As the fluence gradually increases,the base current increases,the collector current remains constant,the current gain decreases significantly,the ideal factor approaches n=2,the composite region is always a composite of space charge regions.Under the same fluence,the laws of the GLPNP transistors after hydrogen-soaked are basically the same as the transistors without hydrogen-soaked.With the constant diffusion of hydrogen atoms,the accumulation of interface charges is intensified,the surface recombination rate is increased,and there is almost no effect on the oxide charge.At the same time,hydrogen has no exacerbating effect on displacement defects.Therefore,the change in the electrical properties of GLPNP transistors hydrogen-soaked is mainly due to the influence of hydrogen on the ionization effect.Different gate voltages affect the performance of the GLPNP transistor during irradiation but have no effect on the carrier recombination position.Compared with the zero gate voltage,the positive gate voltage mainly accelerates the accumulation of oxide charges and does not aggravate the interface state;the negative gate voltage mainly affects the accumulation of interface charges.At the same time,different gate voltages will not affect the minority lifetime,indicating that gate voltage has no effect on displacement defects.The change in the electrical properties of the GLPNP transistor is mainly due to the interface charges,which is not directly related to the displacement defects caused by proton irradiation.The working state of the transistor mainly affects the ionization effect,which affects the electrical performance of the GLPNP transistor.Under the positive emitterjunction bias,the amount of oxide charge decreases;when the emitter junction reverses,the concentration of interface charges increases.And regardless of the operating condition bias of the emitter junction voltage,there is no significant effect on the lifetime of the minority carrier,and carriers are compounded in the space charge region.It shows that the bias of the emitter junction mainly affects the ionization damage caused by the irradiation of 3 Me V protons,but does not have much influence on the bulk defects caused by the displacement effect.