The Study On The Irradiation Effect And Models Of InP HBT

In a number of millimeter wave devices,InP/InGaAs HBT devices have been widely used in aerospace systems,military communications,satellite systems with their excellent material properties and high frequency characteristics.However,in the complex space irradiation environment,the application of InP HBT devices and circuits faces great challenges.The high energy heavy ions and protons in space produce various radiation damage effects on InP HBT devices and circuits,such as single event effect and displacement effect,which causes the degradation of InP HBT or circuits changing instantaneously or permanently,and then the whole spacecraft electrical system would be dysfunction or failure.With the increasing complexity of spacecraft system and the integration of devices,the harm of space radiation effect would be more serious.Therefore,it is necessary to study the radiation damage mechanism of InP HBT to provide a clear theoretical basis for the reliability evaluation and the improvement of anti-radiation reinforcement design of InPIn addition,in order to improve the ability of anti-irradiation resistance of electronic devices in spacecraft,it not only needs to study the radiation damage mechanism of InP HBT devices,but also needs to improve the reliability of the circuit design and design the anti-irradiation circuits.As a link between devices and circuits,the device model is the basis of realizing the correct simulation of irradiation effect and the reinforcement design in circuit.Therefore,the establishment of an accurate InP HBT radiation model could evaluate the characteristics of InP HBT devices under the influence of radiation effects accurately,and then guide the optimal circuit design,which is also necessary for the application in aerospace,and is of great significance.Although researchers at home and abroad have carried out some studies on InP HBT and made some achievements,the researches on the physical mechanism and irradiation model of the irradiation effect in InP HBT are still not thorough and perfect,and there are still several points to be further studied: 1)The analysis of single event effect mechanism and the key factors of InP HBT device are not studied in detail,including the influence of heavy ion irradiation positions and bias states on the single event effect of InP HBT device;2)The single event transient current model of InP HBT devices is simple,and the parameters related to single event effect are not considered;Although there is the transient current model of InP HBT in some literature,the model factor is single and it is more difficult to use without considering various factors;3)Although there are a lot of researches on the irradiation effect of InP HBT devices,the researches about irradiation model mainly focus on Si MOS,SiGe and GaAsHBT devices and most of them are only on DC model.There is no research on the proton irradiation compact model of InP HBT.Based on the above problems about the studies of irradiation effect and models of InP HBT,the corresponding researches would carry out in this paper.The main works and achievements are as follows:(1)The physical mechanism of single event effect in InP HBT device is studied.The generation and collection mechanisms of electron-hole pairs are analyzed.The influence of different factors on single event effect is discussed.With SRIM simulation tool,the parameters of heavy ion model are calculated,which makes the model more accurate and more reasonable.Then,the parameters are added into TCAD to simulate the single event effect and the generation and collection mechanisms of electronhole pairs are analyzed.Based on the single event transient effect model,the parameters of simulation conditions are changed and the factors are discussed to analyze the influence on single event effect of InP HBT,including heavy ion incident positions,bias states and collector connected with different loads.The transient current at device terminal and total collection charge affected by different factors are analyzed.The sensitive area and worst bias of the device are determined.Therefore,the analysis results is the basis for further InP circuit.(2)The single event transient effect of InP HBT device is studied by pulse laser.The variation of transient current under different factors is revealed and the correctness of theoretical analysis is verified.The interaction between laser and material is analyzed,and the mechanism of laser pulse induced single event effect in InP HBT is discussed.The influence of laser energy,collector voltage and irradiation position on the single event transient effect of InP HBT is studied.The transient current and collection charge with laser energy,device bias condition and irradiation position are analyzed,and the correctness of numerical simulation results and analysis is verified.The study of single event transient mechanism in InP HBT devices provides a valuable basis.(3)The analytical models of single event transient effect in InP HBT are established with considering various factors.Based on the model,the single event effect of D flip-flop circuit is analyzed before and after reinforcement.Based on the pulsed laser experimental results,the relationships between the peak value of transient current and energy,collector voltage and irradiation position are analyzed,and the analytical models of single event transient effect of InP HBT device related to energy,collector voltage and irradiation position are established.The key structures and sensitive nodes of D-flip-flop are analyzed.For the bias of sensitive devices,the single event transient pulse with different laser energy is calculated based on the above model.Then the influence of single event transient on D-flip-flop circuit is studied by adding into transient pulse current model.The master-slave structure of D-flip-flop is sensitive to single event effect and is strengthened design.It is verified that the strengthened D-flip-flop circuit has a better ability to resist single event effect.The analytical model of single event transient effect provides a convenient and fast way to predict and verify the ability of circuit with resistance to single event effect.(4)The proton irradiation effect of InP HBT device is studied,and the model of InP HBT proton irradiation is established.A basic compact model for InP HBT devices is established.The proton irradiation damage mechanism and the influence on AC and DC characteristics of InP HBT are discussed.Based on InP HBT Agilent compact model,the model parameters with different doses are extracted,and the relationship between model parameters and the irradiation dose are discussed.The radiation factor is introduced to correct the model equation.Then the proton irradiation compact model of InP HBT device is established,which provides a powerful and feasible method for the design of anti-irradiation circuit and lays a foundation for improving the antiirradiation ability of circuit.In this paper,the single event effect and proton irradiation damage mechanism of InP HBT device are clarified,and the single event transient effect model related to various factors and proton irradiation compact model of InP HBT device are established,which provide theoretical and experimental basis for the irradiation analysis and anti-irradiation reinforcement design of InP HBT devices and circuits.