Computer Statistical Analysis Of Electron Irradiation To Improve The Parameters Of Transistor Ts

Electron beam irradiation, instead of neutron irradiation or Co-60 irradiation,is a new technique to improve the storage time TS of power bipolar transistor. The coherence of storage time TS of power bipolar transistor can be consumedly improved by using the technique of Electron beam irradiation, the manufacture efficiency can be expedite, and the cost can be reduced.A research team of Electron beam irradiation instead of Co-60 irradiation to improve the coherence of storage time TS of power bipolar transistor came into existence in March 2009, in Shenzhen SI SEMICONDUCTORS CO., LTD. The author of this paper has been appointed as the team leader, in charge of the technical amelioration. From the foundation of the company, the technique of irradiation had not made any improvement until this research started. The economy crisis in 2008 increased the requirement of companies. However, the deposited time TS control was the most important part.During 6 months research work, the irradiation processing industry has been realized, the principle of Electron beam irradiation using in Power Bipolar transistor, has been studied. After the analysis of manufacture data about irradiation technique, the appropriate production flow and technique parameter was given. The research was accomplished in March 2010. This thesis is the sum-up of the research.Content :1.Exploring the development of irradiation technique2.The Application of irradiation technique using in semiconductor element manufacture was studied.3.The principle of some parameter about Power MOSFET applied in the electricity-saving lamp4.A particular research is done about the irradiation technique of Power MOSFET...