Study On Characteristics Of 4H-SiC Npn Bipolar Transistor

In this paper, the characteristics of 4H-SiC bipolar transistor has been studied. Its numerical model has been developed with the two dimensional simulator-Medici, and then, the characteristics of device have been simulated.The parameter models have been developed considering the experimental data from hundreds of literatures such as IEEE's publication and Applied Physics, that include bandgap model, mobility model, auger recombination model, SRH recombination model, impact ionization model, incomplete ionization model of inpurities and band-to-band tunneling model. The results of simulation are fit for the experimental data well, so that the present model is believable. This numerical model is helpful for further research on the 4H-SiC bipolar transistor.In addition, SiC heterojunction bipolar transistor is discussed for improving the characteristics of SiC homojunction bipolar transistor, for example it can increase the device's current gain.The development of SiC heterogeneity bipolar transistor is also summarized in the end.