Research On Theory And Process Of The EIT-Like Effect

With the development of the dense wavelength division multiplexing system and the all-optical communication,the all-optical switch and all-optical buffer are developed.Compared with photoelectric devices based on photoelectric transmission mode in the current stage,all-optical devices have the advantages of lower operating cost,faster speed,higher efficiency and greater transmission capacity.Electromagnetically induced transparency effect(EIT)can induce slow light and enhance optical nonlinearity,so all-optical devices based on this type of EIT-like effect will become the next generation of all optical communication research emphasis,especially all-optical switch.Motivated by the above background,we proposed Mach-Zehnder Interferometer(MZI)all-optical switch based on EIT-like effect of photonic crystal,and investigated intensively the property and application of the Plasmon-induced transparency(PIT)effect derived from the combination of EIT-like effect and Surface plasmon polaritions(SPPs)phenomenon.The main contents includes the following aspects:(1)We select InGaP compound material with higher nonlinear coefficient and higher response speed as the structure material;we proposed integration with EIT-like effect MZI all-optical switch as switch structure.(2)We use the semiconductor manufacturing technology,like epitaxial growth,photo-lithography and etching process,to complete the production of switching devices structure,and set up the functional test system to complete the detection of the device.(3)We investigate systematically the intensity modulation of single,double and multiple PIT effects based on hybrid metal-graphene metamaterials,and update the "terahertz gap".(4)By combine with the photoelectric property of graphene and the mechanism of PIT effect,we carry out studies on the dynamically tunable PIT effect based on the Coupled mode theory(CMT)theory and Finite-Difference Time-Domain(FDTD)algorithm,and realize the function of refractive index sensing.