Doping As < Sub > 2 < / Sub > S < Sub > 8 < / Sub > Preparation Of Waveguide Refractive Index Of Performance To Research

Chalcogenide amorphous semiconductors are nonlinear optical media forlong-wavelength applications, such as infrared lens, infrared chemical and biologicalsensors, optical fiber for CO₂laser transmission, high-speed optical switching, powerlimiter, optical Kerr effect chopper, nonlinear optical device and so on. Chalcogenideamorphous semiconductors exhibit a variety of photoinduced phenomena. Amongthose, the optical stopping effect is the one of dramatic phenomena.The mechanism of optical stopping effect is assumed to be caused through thepumping of sublevel electrons under irradiation in the band gap region. Thisphenomenon was not observed in As2S3films. The result is showed ms degree for thestopping response time and s degree for the slow-recovery one. The Tin-doped As2S8can significantly improve recovery response time to ms degree. The factors forrecovery, such as He-Cd laser irradiation time and the sum of He-Ne laser photons,have been studied for Tin-doped As2S8, and the experimental rules are concluded. Themechanism of recovery process of optical stopping is discussed. In addition, thephotorefractive behavior of Tin-doped As2S8films is examined in this study as apotential process for waveguide fabrication. The experimental rules in three states ofas-evaporated, annealed and well-illuminated are concluded respectively. The X-raydiffraction spectra and visible spectroscopy are provided. An ultraviolet irradiationtechnique was presented and employed successfully to fabricate a Tin-doped As2S8stripe waveguide. This stripe waveguide displayed good characteristics of a waveguideusing the632.8nm guided mode excitation.