| Recent years, with the rapid development of information technology, the commu-nication rate has been expanded in a large scale. But in the traditional communication system, many electric devices are still been using, so the photoelectric conversing rate becomes the bottleneck of the communication system.In order to solve this problem, some researchers propose the “all-optical commu-nication system”, the all-optical communication system contains no electric devices, so the problem of photoelectric conversing rate can be completely solved. In the all-optical communication system, all-optical switch is a key component. Till now many types of all-optical switch have been researched, such as MZI structure, quantum dot and special optical fiber. But many of them are based on SOI. As the nonlinear effect is not strong in silicon, it is not suitable for highly integration.On the other hand, III-V components have big nonlinear effect, so all-optical switch based on it can be much smaller.In this thesis, we mainly studied the design of all-optical switch, the fabrication technology of In Ga P photonic crystal and the PIT effect:(1) The research of all-optical switch, the EIT-like effect, the PIT effect and the fabrication technology of photonic crystal are introduced briefly.(2) The numerical method, the coupled-mode theory are introduced; Matlab is used to compute the transmission spectrum of the photonic crystal EIT-like system and the switch power of the all-optical switch. Then we designed the structure of the switch.(3) The photonic crystal structure is fabricated on In Ga P/Ga As substrate. Then, we did many experiments to optimizing the ICP parameter.(4) To choose the best etchant of Ga As while remaining In Ga P, many experiments have been done to find their selective etching ratio. At last the best one is selected.(5) The structure of the single cavity PIT effect is designed, and the simulation results show that the PIT effect happens, and signal is delayed by 2ps. |
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