Research On Silicon-based Millimeter-wave Doubler And Power Amplifier

The use of intelligent terminal and the rapid growth of mobile data are making unprecedented challenges for wireless service providers to overcome a global bandwidth shortage.Millimeter-wave(mm-Wave)technology is widely considered as one of the key technologies that will continue to serve the consumer demand for increased wireless data capacity.Meanwhile,the advanced silicon-based technologies permit the integration of a full transceiver in mm-Wave bands.The systems operating at frequencies above 100 GHz can be used for telecommunications,remote sensing,and mm-Wave imaging and planetary radiometry.A major challenge for electronic systems at these frequencies is the availability of relatively inexpensive spectrally pure signal sources.Although attempts have been made to realize oscillators at high frequencies,it is a common approach to multiply a lower frequency source which can achieve better frequency stability and phase noise.Furthermore,one of the few remaining blocks that have yet to be successfully integrated is the Power Amplifier(PA),its function is to amplify the signal power up to the required level before it can be transmitted into the air.Due to several limitations of silicon-based technology,designing a linear and efficient PA is still a challenging task.The main work of the thesis includes the technology research and circuit design of 240 GHz doubler and 140 GHz power amplifier.1.In this thesis,the characteristics and research methods of mm-Wave technology are firstly introduced.The topologies and technical indexes of D-band power amplifier and frequency doubler are summarized.Secondly,the thesis introduces the devices in silicon-based integrated circuits and the main technical indicators of power amplifier.The methods to improve the bandwidth,gain,output power and linearity and efficiency of power amplifier are described in detail.At the same time,the main technical indexes and performance improving techniques of the frequency doubler are introduced.2.Then,the design and simulation of the 240 GHz doubler based on 0.13?m SiGe BiCMOS process are completed.The 240 GHz doubler includes a 120 GHz power amplifier and a 240 GHz frequency doubler.The 120 GHz power amplifier consists of four single-ended common emitter amplifiers which are cascaded.The simulation results show that the single-ended power amplifier has a small signal gain of 21.97 dB at 120 GHz and a 3 dB bandwidth of 24GHz(98-122GHz).At 120 GHz,the saturated output power is 7.04 dBm,the output 1 dB compression point is 3.87 dBm,the power added efficiency is 7.5%,and the DC power consumption is 55.68 mW.The doubler is a classic push-push structure.The simulation results show that the maximum output power of the frequency doubler is 3.84 dBm,the maximum power gain is-4.76 d B,and the DC power consumption is 35 mW.The 240 GHz multiplier achieves 10 dB of power gain and 0 d Bm of output power.3.Then,the thesis describes two 140 GHz power amplifiers based on 65 nm CMOS process.The first power amplifier is three-stage fully differential structure.The first two stages are common source structure and the last stage is the cascode structure.The simulation results show that the power amplifier has a small signal gain of 17.5dB at 140 GHz,a 3dB bandwidth of 25GHz(130-155GHz),a saturation output power of 7.9 dBm,a output 1 dB compression point of 5.2 dBm,a power added efficiency of 7.5%,and DC power consumption of 80 mW.The second power amplifier uses four-stage fully differential structure and four stages are all common source structure.The simulation results show that the power amplifier has a small signal gain of 16.8d B at 140 GHz,a 3dB bandwidth of 17GHz(136-153GHz),a saturation output power of 11.3 dBm,a output 1 dB compression point of 6.55 dBm,a power added efficiency of 4%,and DC power consumption of 160 mW.Finally,the thesis presents two improvements to the power amplifier structure which can be used to increase the gain,output power and efficiency of the power amplifier.In this thesis,the design methods of millimeter-wave doubler and power amplifier are summarized and analyzed in detail.Based on the 0.13 ? SiGe BiCMOS process,a 240 GHz doubler is designed and two 140 GHz power amplifiers are designed based on 65 nm CMOS process.The design of the doubler and power amplifier circuit reaches the required performance indicators.