Design And Study Of Source Drain Symmetric And Interchangeable Bidirectional Tunneling FET

As semiconductor technology has matured,MOSFET,as the basic unit of large integrated circuits,will become smaller and smaller as required by Moore's Law,and today's microelectronic technology has entered nanometer-scale dimensions.However,not only the difficulty in manufacturing process deepens,but also the various adverse effects have become more prominent.The ever-decreasing channel length can cause serious short-channel effects,and the power-limiting issues of integrated circuits have also led academics to explore new devices that can replace MOSFET.The sub-threshold swings of MOSFET used in IC designs today are limited to 60 mV/dec due to their physical mechanism of current generation during operation.When the tunneling FET is used as a switching device,the above-mentioned limitation is avoided by using quantum mechanical band-to-band tunneling,rather than thermal injection,to inject charge carriers into the device channel,so that the subthreshold swing of the conventional tunneling FET is obviously better than the 60 mv/dec limit of the MOSFET.Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor(CMOS)transistors.However,the asymmetric structural features of ordinary tunneling FETs make it impossible to completely replace the MOSFET with symmetrical structural features.Taking an N-type tunneling field effect transistor as an example,if the source and the drain are interchanged,that is,the drain is at a low potential and the source is at a high potential.In this case,the tunneling FET is always on,and the on-state current is not controlled by the gate,so that the entire tunneling FET fails.In order to effectively combine and utilize the advantages of MOSFET on source-drain interchangeable and the advantages of tunneling FET includes low subthreshold swing and low power consumption.In this paper,a design of a source-drain symmetric interchangeable bidirectional tunneling FET(SDSI BD TFET)is presented,aims to overcome the limitations of device applications in the design of integrated circuits.In this paper,SILVACO-TCAD simulation software is used for all the simulation of the proposed source-drain symmetric interchangeable bidirectional tunneling FET.The influence of different device parameters on the electrical performance of the novel tunneling FET is analyzed,then the basic principle of the device is used to explain the simulation results in detail.Finally,derive the most optimal parameters of source-drain symmetric interchangeable bidirectional tunneling FET with the optimized electrical performance,and it is of certain significance for the future design of novel tunneling FET.