Research On Wide Bandgap Semiconductor GaN Radiation Detection Technology

The third generation semiconductor materials,which are represented by GaN,with the characteristic of large energy gap has the advantages including large energy gap,high heat conductivity,low dielectric constant and the high speed of drifting electron semiconducting material.The radiation detector which made by GaN is to develop a new kind of detectors with small volume,strong resistance of radiation and fast speed of time response to replace the present Vertex Chamber and the track detector.Research on GaN radiation detector mainly includes the physical process and production process,physical process research focus in gallium nitride crystal energy deposition features for beam,energy deposition features is one of the important features that affect detection efficiency,it is influenced by various factors such as the probe detection mechanism,material properties,the type of the incident ray and radiation energy.Process research focus in process improvements include detector electrode production process,encapsulation process and other processes,among which,the emphasis and difficulty for current mode radiation detector is electrode coating system,only perfect ohm contact can make stable performance.This paper researched physical property about GaN radiation detector and the influence of incident gamma ray energy and energy deposition at different positions of the detector by Monte Carlo method in the case of putting PTFE in front-end and back-end of GaN radiation detector.For the production process aspect in this paper,we studied ohmic contact electrode surface plating system theory,experimental test the performance of the detector sample and evaluated the effect of ohmic contact electrode,get the detector sensitivity and the charge collection efficiency of sample under different bias The research results of this paper lay the foundation of the study on the detection performance of GaN radiation detector.