| Cadmium Selenide(CdSe) is a Ⅱ— Ⅵ compound semiconductor with direct transition, wide-band-gap. Due to its high atomic number(41), wide energy gap(Eg=1.7eV), high transference of electron and hole in the crystal and high product of rate of transference and lifetime etc, CdSe is regarded as one of the most promising material for room temperature nuclear radiation detectors. In the process of the fabrication of CdSe room temperature nuclear radiation detector, the tehnic of electrode is one of the most importance processes.In this paper, base on the systemic discussion about the action theory of nuclear radial and material and property of detector structure, the effect of the leakage current and polarization of CdSe room temperature nuclear radiation detector during difference electrode in difference structure is studied and the innovative result is found.The main working style of the 241Am Y ray radiation and CdSe single crystal is photoemission and the work range is the folium on the CdSe surface thought theoretical calculation. After the action of proper voltage, the value of the output electron pulse is only a few millivoltages.This paper, through X ray photoelectron spectroscopy (XPS), analyzed the chemical characteristic of surface of CdSe after oxidized at oxydol and at high temperature in the air, and found that surface compounds are SeOx(x<1), SeO2, Cd(OH)2 and CdCO3, which are stabile oxidized layer of high resistivity and could eliminate the bad condition of electronic apparatus surface and leakedcurrent and the rate of signal and chirp caused by surface after oxidized at oxydol. But, after oxidized at high temperature in the air, the surface compounds are SeOx(x |
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