Research On Radiation Detection Technology Based On Wide Band-gap Semiconductor Materials

In recent years,with the rise of high energy physics in various fields and the application of rays in production and life,there is a growing requirement for radiation detectors which operate stably and efficiently in high energy and high temperature environment.Wide band-gap semiconductor material,as the third generation of semiconductor material,is applied in radiation detectors.It has high radiation resistance,thermal stability and other excellent properties.At the same time,the use of SiC material as the detector material is more ripe in current process,which is the best choice of all kinds of wide band-gap semiconductor detectors.This paper studies the radiation detectors based on wide band-gap semiconductor materials,studies and analyzes the detection efficiency and energy deposition under various conditions,in order to lay the foundation for wide band-gap semiconductor application in the future.In this paper,Monte Carlo method was used for numerical simulation calculation to obtain the sensitivity and energy deposition of SiC,GaN and Si semiconductor detectors under different energy electron and photon conditions,and to compare the energy deposition and detection efficiency of SiC and GaN detectors which covered with boron polyethylene materials under neutron incidence conditions.The results show that the energy deposition and detection efficiency of the wide band-gap semiconductor detectors is superior to the conventional semiconductor detector.The electronic energy deposition is about 7%in SiC compare with Si,and the sensitivity is more than 11.5%in SiC compare with Si.The photon energy deposition is about 314%in GaN compare with Si,and the sensitivity in GaN is about 200%higher than Si.For the neutron,GaN detector is better than SiC detector,the thickness of the boron polyethylene conversion layer and the coating form have a certain effect on the performance.The thicker conversion layer is selected in the high energy area,and the thin conversion layer is selected in the low energy and medium area.