Study Of The Characteristics SiC Radiation Detector And Readout Electronics Design

Traditional first-generation(Si,Ge)and second-generation(GaAs)semiconductor detectors have high energy resolution,short charge collecting time,and high detection efficiency,so they have a wide range of applications in many nuclear detection fields,but due to the narrow bandwidth,they cannot work in extreme environments with high temperature or strong radiation,it's necessary and urgent to find new semiconductor materials,while SiC material has received widespread attention due to its wide bandgap.In this paper,according to the demand of space astronomical observation,the electrical characteristics of Schottky SiC detectors are tested and analyzed.The readout electronics of SiC detectors are designed and manufactured.The performance of SiC detectors after strong irradiation is also tested and analyzed.First,the electrical characteristics of Schottky SiC detectors were tested and analyzed.At room temperature,the ideal factor and barrier height of the Schottky SiC detector were obtained by the forward I-V and C-V characteristics.The reverse I-V characteristic test results showed that the Schottky SiC detector has a small leakage current with pA magnitude.However the magnitude of the leakage current of the Si detector is nA.Then,the bias characteristics of the SiC detector were tested,and the bias voltage(0V-100 V,step length with 10V)was gradually changed.Then the energy resolution of the detector at different bias voltages was obtained.The bias voltage and detector energy resolution were studied,we found that the detector work best at 30-40 V,with fully depleted state.Then,the readout electronics of the charge sensitive preamplifiers A225 F and A250 based on AMPTEK were designed,and the α-particle response of the SiC detector was tested.The alpha particle(5.15M)energy spectrum was measured based on the A225 F circuit with a resolution of 4.8%,and the resolution based on the A250 circuit is 4.6%.The difference of energy resolution is not significant,but the A250 is better for circuit design flexibility.Finally,1000 KGy gamma source irradiated to SiC detector and Si detector without no interruption,the reverse IV characteristic and alpha particle energy spectrum response of SiC detector and Si detector before and after the irradiation were tested and analyzed.The results showed that the SiC detector was resistant to radiation better than Si detectors.In the future,the SiC detector may replace the Si detector for space exploration.