Preparation And Research Of Binary Metal Oxide Resistive Memory

Semiconductor device miniaturization is an important development direction of the electronics industry;the size has come to the theoretical limit,which is 32nm,due to the limitations of Flash storage structure.The resistive memory has advantages in terms of device structure,fabrication process and storage capacity.It is the next generation of memory that is most likely to replace Flash memory.In this paper,the resistive memory of Al/Ti O₂/ITO,Al/Ti O₂/Pt and Cu/TiO₂/Pt were fabricated by magnetron sputtering method.The performance of the device was tested by using the semiconductor parameter tester.When the preparation pressure is1.0Pa and the power is 100W,the Al/TiO₂/ITO device exhibits good resistance characteristics,and the high and low resistance ratio of the device after multiple cycles is more than 10.Al/TiO₂/ITO devices belong to bipolar resistive memory.The Set process occurs on the negative axis.The Reset process occurs in the positive axis,which is mainly due to the oxidation of the Al electrode to the AlO_x.When thickness of the film was changed,the opening voltage of the device increased with the increasing of the film thickness which is mainly caused by the influence of the electric field intensity.By using different top electrode to induce different resistance mechanism,Al/TiO₂/Pt device leads to the SCLC mechanism.The internal defects of the film realize the transition of high and low resistance state to the capture and release electrons.It belongs to bipolar resistive memory,after many cycles of tolerance become worse.Cu/TiO₂/Pt device leads to the mechanism of conductive filament.It is proved that the composition of conductive filament is Cu,and the device belongs to ECM type bipolar resistance memory.The opening and closing process of the device is influenced by the scanning voltage.It is the effect of the accumulation of electric field,the device to achieve high and low resistance of the transition is mainly conductive filament formation and fracture,the mechanism of resistance is SCLC mechanism and the role of conductive filament mechanism.