Design,Syntheis And Electrical Memory Application Study Of Porphyrinbased Metallpolymers

With the arrival of big data era,enormous information is generated,which need to be processed and recorded fast and safely.This requires the modern data memory devices are of excellent characteristics such as high storage capacity,good stability,small volume,low weight and cost,protable,etc.Researchers have made huge efforts to study the storage mechanisms deeply,optimize the storage ability,and explore new storage materials and devices,in order to meet the harsh requirements of modern memory.The traditional silicon-based memories face severe obstacles in reducing their sizes to overcome the Moore's raw,while,organic memory devices hold great promise in the ultrahigh density and flexible storage with the development of organic electronics.Base on different storage mechanisms,various organic memory materials have been explored,such as small molecules,polymers,biological proteins,natural cellulose,and organic-inorganic composite materials,etc.However,most organic materials can only realize binary recording,which is difficult to meet the requirements of high-density storage.Therefore,it is very necessary to develop ternary or multi-level organic memory materials and devices.In this regard,the main research contents of this paper are as follows:(1)A series of porphyrin-based mononuclear metallopolymers(denoted as P-Fe,P-Ni,P-Co,and P-Fe1)and heterobimetallic polymers(denoted as PFeNi and P-FeCo)were designed and synthesized.The structures,molecular weights and thermal stabilities of the as-synthesized polymers were characterized by the nuclear magnetic resonance(NMR),infrared spectroscopy(FT-IR),gel permeation chromatography(GPC)and thermogravimetric analyzer(TGA)(2)A series of porphyrin-based palladium and platinum mononuclear metallopolymers(denoted as P-Pd and P-Pt)and porphyrin-based heterobimetallic polymers(denoted as P-FePd and P-FePt)were designed and synthesized.The structures,molecular weights and thermal stabilities of the asprepared metallopolymers were characterized by nuclear magnetic resonance(NMR),infrared spectroscopy(FT-IR),gel permeation chromatograph(GPC)and thermogravimetric analyzer(TGA).(3)Sanwich-like electrical memory devices were fabricated with the above metallopolymers as active layer.The I-V characteristic curves,information retention time and the read and write cycles of devices were tested.The preliminary results indicate that the ITO/P-Fe1/Al device exhibits binary flash memory characteristics,and ITO/P-FeCo/Al device shows ternary memory behaviour.