An Optically Encryption Of OFET Memories Based On Nanoarrays And Tunneling Structures

Compared with traditional silicon based semiconductor memory,the field effect transistor memory has the advantages of wide material source,relatively low cost,solution processing,and relatively simple process.The field effect transistor memory with electret as charge capture layer is widely concerned by researchers because of its controllable dielectric constant,good film forming,clear mechanism and easy surface morphology control.In this paper,PVP(poly(4-ethylphenol)is used as the research object,and the simulation is carried out from the aspects of material selection,film morphology control,device preparation,function integration,information encryption,etc.the specific research results are as follows.(1)The morphology of PVP and PVK electrets is controlled.By adjusting the concentration of solution,viscosity of solution,spin coating speed and mode,incident velocity and annealing time of solution,the smooth film morphology,nanopore film morphology and nano array film morphology of PVK electret are described.The smooth film morphology,nanopore film morphology,and the method of adjusting the morphology of the films coexisting with nano holes and nanoarrays provide good film conditions for the preparation of the devices.(2)Through the above-mentioned nano film control method,the charge storage layer with the most abundant surface morphology and low roughness of nano array and nanohole is adopted to realize the low operating voltage,high carrier mobility,high current switching ratio,good optical erasure effect and stable charge storage level.The bipolar storage and multi-level storage are realized Storage and analysis of storage mechanism.(3)The PVP electret has the airport effect memory,which can realize the multi-level storage characteristics under the photoelectric joint control,and the threshold voltage of the storage device can realize the directional offset of the threshold voltage under different write conditions.The device successfully realizes the fourth order storage characteristic under the condition of three basic colors and electricity.Different threshold voltage can be used as output level signal to realize information coding and encryption function,and the optical encryption at the bottom of the device is successfully realized.At the same time,the storage capacity is improved,and the power consumption and information security are improved.