Designation And Fabrication Of Organic/Inorganic Assembly Materials Based Organic Memory Devices For Storage Performance

The traditional silicon-based semiconductor technology has been gradually approached its physical limits.On these respects,with the great demand for high-performance and high-density memories,it is very important to realize the enormous performance promotion on the basis of the existing technology.At present,the combination of the organic and inorganic materials can greatly improve the memory performance in all directions.For example,on one hand,it can realize the storage from binary to the multi-level,leading to the increasing of the storage density in devices;on the other hand,through the design of the molecule,multi-functional devices can be also fabricated.Therefore,this article focus on designing and fabricating a series of novel electrical storage devices based on organic/inorganic hybrid materials,and the performance has been studied in detail.The main work is as follows:?1?Preparing FLASH Memories by Tuning the content of Au@air@TiO-h Yolk-shell Microspheres in Poly?3-hexylthiophene?Layer.In this section,crystalline hybrid microspheres encapsulating a Au nanocore in the hollow cavity of a hairy semiconductor TiO₂ shell?Au@air@TiO₂-h microspheres?was prepared.The electrical rewritable memory effects of the Al/[Au@air@TiO₂-h+P3HT]/ITO sandwich devices can be effectively and exactly controlled by tuning the microsphere content in the electroactive layer.This finding would provide important guidelines for the reproducibility of nanocomposite-based memory devices and is helpful to demonstrate the switching mechanism of these devices.?2?Reversibly Thermoresponsive Metallo-Supramolecular Polymer based Ternary Memory Devices.This section focus on investigating the relationship between ternary memory behavior and a thermal stimulus in metallo-supramolecular polymer based organic memory devices.When a bias voltage is applied to the memory cell,the Al/[PolyCo L1_xL2_y-PF₆]/ITO device can be assigned to the nonvolatile ternary memory behavior.When the device at LRS?‘ON2'?is heated to 393 K,prompt I-V testing shows that the resistance drops back to HRS?‘OFF'?.When the device is completely cooled down,the device can be returned to the LRS?‘ON2'?when a positive forward voltage is applied.Furthermore,this research provides a possible strategy for the development of novel organic thermal sensors.?3?Resistance Controllability in Alkynylgold?III?Complex-based Resistive Memory for Flash-type Storage Applications.In this section,we attempt to introduce novel alkynylgold?III?materials into memory devices with superior performance.In this respect,an alkynyl-containing coumarin gold?III?complex,Complex 1,has been synthesized and integrated into a sandwiched Al/[(C₁₉N₅H₁₁)Au-C?C-C₉H₅O]/ITO device.By precisely controlling the compliance current(I_cc),the devices show different switching characteristics from Flash-type binary resistance switching(I_cc?10^-3 A)to WORM-type ternary resistance switching(I_cc=10^-2 A).This work explores electrical gold?III?complex-based memories for potential use in organic electronics?4?Preparation of Alkynylgold?III?Complex based Resistive Memory with Electrical Read and Optical Erase Behavior.In this section,an alkynyl-containing coumarin gold?III?complex,Complex 2,has been synthesized and integrated into a sandwiched Al/[Complex 2]/ITO device.This device represents the performance of electrical read and light erase behavior.We studied the causes of the behavior and put forward a possible mechanism.This work explores the possibility of the use of Alkynylgold?III?Complex based organic memory in photoelectricity applications.