Structure Design And Fabrication Of Semiconductor Laser Diodes Emitting At 852nm

Semiconductor laser has been widely used in many areas such as civil and defense.With its advantages of small size,light weight,high efficiency,long life,It is mainly used in fiber-optic communication,data storage,holographic technology,length and speed measurement,scan to print,entertainment and so on.With its special wavelength characteristics,852 nm semiconductor laser is widely used as the core components of cesium atoms,The quality of laser diodes directly affects the precision of time,and have an effect on spatial orientation and military defense.This article describes the design process and comprehensive research methods of 852 nm semiconductor laser from the following aspects:Firstly,this paper has introduced the development status,working principle,advantages and applications of semiconductor lasers.And the research background,application and development of 852 nm has been introduced.Secondly,the development and classification of epitaxial technology has been introduced,especially the concept,basic principle and the Metal-Organic Chemical Vapor Deposition.And a brief introduction of the working principle of the testing instruments is introduced which is commonly used in laboratory,Photoluminescence and Electrochemical C-V.Then,we use K·P perturbation method to simulate the quantum well of the laser and get the approximate range of material components to active region,the waveguide structure has been designed and analyzed by using the transfer matrix method and SODES.It is found that structure characteristics of asymmetric waveguide structure and asymmetric waveguide structure has an effect on the mode characteristics and the threshold characteristic.The epitaxial structure of 852 nm laser diodes is given.After that,we analyze the influence of the epitaxial conditions in the growth process.By the preparation of a simple quantum well structure,the study of V/III ratio is done and the optimization of V/III=25 is given.Finally,based on the optimized structure,the symmetric waveguide structure and an asymmetric waveguide structure was carried out by using the MOCVD.Then,laser diode chip was fabricated after photolithography,etching,deposition,sputtering,cleavage,coating,sintering,welding,packaging and other post process.At the same time,the performance of the laser diodes is tested to determine the performance,and a kind of 852 nm semiconductor laser with asymmetric waveguide is fabricated.