Study On The Output Characteristics Of Single-mode Semiconductor Laser With Different Shape Of Ridge Waveguide

Nowadays, as more and more widespread application of semiconductor lasers, so more and more.Characteristics of the Lasers will requirements to the people. Because the ridge waveguide will affect the output characterstics of Semiconductor Laser,on this paper,we study on the impact of ridge waveguide to the Semiconductor Lasers.On this paper,we first review the structure, principle and history of Semiconductor Laser,and second,we analyze the theoretical of the epitaxial layer structure and some of major characteristics which in quantum well laser.We have designed and produced two type of Laser,which have a large optical cavity of the cavity length of 750μm, ridge width of 4μm, ridge height of 0.7μm and 0.8μm.Finally,we measured the P-Ⅰcharacteristics and the optical properties of the Lasers. We get when the ridge height of 0.8μm,the threshold current of Laser is 14.5mA, the vertical divergence angle of 27.5°and the horizontal divergence angle of 8.4°,and when the injection current is 100mA,the continuous output power under 80mW,the maximum laser slope efficiency of 0.8W/A.We also get when the ridge height of 0.7μm,the threshold current of Laser is 17mA, the vertical divergence angle of 27.9°and the horizontal divergence angle of 9°,and when the injection current is 100mA,the continuous output power under 70mW,the maximum laser slope efficiency of 0.75W/A. From the ansysis of the different output characteristics of two different Laser,we get that etching depth has the direct influential to single-mode Semiconductor Lasers.