Study On MOCVD Growth Of808nm Laser Diode With TM Polarization

In this paper, the metalorganic chemical vapor deposition (MOCVD) was generallyintroduced and the advantages of growing materials by it were showed. The MOCVDgrowth process of TM mode808nm laser diode (LD) wafers was discussed. GaAssingle crystal wafer was used as the substrates. The relationship of different phosphorusarsenic ratio in vapor phase and GaAsP solid phase was studied. The effect of quantumwell thickness and strain on the location of light holes and heavy holes was analyzed. Itwas found that the laser mode could be changed with varying the well width. The TMmode808nm LD could be obtained when the well width is14nm. The waveguidethickness had been optimized in the TM mode808nm LD. The maximum slopeefficiency was1.35W/A and the maximum photoelectric conversion efficiency was60.2%operating at3.6A. The output power was11.5W at10A. The LD can workcontinuously at room temperature with power of3W. The power deterioration was lessthan5%after450hours aging.