Production Technology Research On InP-based Single-mode Semiconductor Laser

By studying the characteristics of the laser mode, The paper has established a ridge waveguide structure and In P / In Ga As P material system solutions, analyzed the advantages of the ridge waveguide structure and implemented the simulation on the basic principles of semiconductor lasers by numerical simulation approach. The result finally comes out as the optimization of the structure and the morphology of a ridge-type laser(including etching width, height remaining after etching, cutting height, etching angle) as well as the successful analysis of the morphology of the device of the ridge pattern characteristics and output characteristics of the impact.The simulation scheme is practiced under the condition of present available laboratory equipments. Through optimizing the process on experiments such as lithography, etching, etc., the paper defines the inductively coupled plasma dry etching as a way of implementation device to optimize the etching equipment and the type of gas injected into the work flow ratio, etc., to obtain a more adapted to In P as the substrate, dry etching of an epitaxial structure.The final design of the device: the land width is 4μm, the etching depth is 1.5μm, the etching remaining height is 0.15μm, the etched surface is relatively smooth and steep. Device output characteristics: At room temperature, when the cavity length is 1000 nm, the injection current is 420 m A and the device can achieve a stable single-mode output at a wavelength of 1 558.2nm with the output power of 108 m W and the threshold current of 45 m A.