Research And Optimization The Characteristics Of 550V U Channel Thick Film SOI-LIGBT Device

Intelligent power module(IPM)is a integrate circuits of logic control circuits,high voltage power devices,chip protection circuit and output circuit and other integrated on the single chip,which can make the whole system with advantage of a higher integration,stronger anti-interference ability,lower cost etc,it has been widely used in air-conditioning,motor,refrigerator and other small and medium power field.The silicon on insulator-lateral insulated gate bipolar transistor(SOI-LIGBT)device has the advantages of low leakage current,high insulation,small parasitic capacitance,and becomes an important power device in an intelligent power module.This thesis investigates the research status at home and aboard,Summary the existing solutions to reduce turn off time and improve the short circuit capacity.The short circuit characteristics and switching characteristics of the traditional U-channel thick film SOI-LIGBT devices are tested and simulated.The results show that the traditional U-shaped channel device has the charactrics of weak short-circuit capability and long turn-off time,Combined with the above theoretical research,a new U-channel thick film SOI-LIGBT device with trench isolation anode short circuit structure is proposed in this thesis.In terms of reduce the turn off time,The device uses the isolation trench and short anode techonology,Provides a carrier emptying path for the device in the off state,Effectively reduce the time of the trailing current phase,the turn-off time is reduced.In terms of improve the short circuit capacity,the channel angle a of the U-shaped channel is adjust,it can eliminate extra hot spots,Effective improve the short circuit capability.Finally,the layout of the device is designed and the wafer is tested.At last,for the improved device,the turn-off time reduced from 486ns to 190ns,test results demonstrate that the short-circuit withstand time is 13.?s in 25? @ Vge =5V,Vce =300V with no degradation of any other static and dynamic parameters,Meet the design index.