Design Of 500V Trench Gate U-shaped SOI-LIGBT

Monolithic intelligent power chip integrated logic circuit,signal processing circuit,driver circuit,protection circuit and power devices on a single chip.It makes the control of motor efficient,fast,accurate and reliable,which has very extensive application prospect.Silicon on Insulator Lateral Insulated Gate Bipolar Transistor(SOI-LIGBT)is the core device in monolithic integrated power chip for its strong current capability and high breakdown voltage.The overall power consumption and reliability of the monolithic intelligent power chip are determined by the turn-off loss and short-circuit capability of the SOI-LIGBT.Therefore,it is of great significance to study and design a SOI-LIGBT with low turn-off loss and great short-circuit capability.Based on the planar gated U-shaped SOI-LIGBT based on thick SOI technology proposed by our group in2015,the turn-off and short-circuit capablities of planar gate U-shaped SOI-LIGBT has been analysed carefully.A trench gated U-shaped SOI-LIGBT is proposed based on the planar gated device.It features two trench gates,a U-shaped gate trench(G1)and a U-shaped hole barrier trench(G2).In the forward conducting state,hole barrier trench can improve the hole density at emitter side,which enhances the carrier stored effect,thereby enhancing the circuit capability of the device.During turn-off processing,trench gate U-shaped SOI-LIGBT achieves a less carrier density at collector side and more uniform carrier density in the N-drift region.Moreover,the trench gate assists in sustaining the electric potential from the collector,which can reduce the turn-off time effectively.During short circuit processing.The front P~+emitter can attract hole current,which prevents the device from dynamic latchup,thereby enhancing the short circuit capability of the device.Finally,the process and layout of the trench gate U-shaped SOI-LIGBT are designed,and the wafer is tested in this thesis.The test results show that the turn-off time is reduced by about 150ns as compared with the planar gate U-shaped SOI-LIGBT,and the short-circuit time is increased by 9?s.The trench gate U-shaped SOI-LIGBT can effectively improve the turn-off and short-circuit capability.