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Study Of Driver And Protection Technologies For Insulated Gate Bipolar Transistor For High Power Application

Posted on:2008-09-18Degree:MasterType:Thesis
Country:ChinaCandidate:X LuoFull Text:PDF
GTID:2198360272465796Subject:Power electronics and electric drive
Abstract/Summary:PDF Full Text Request
With the development of power systerm,The problems of improving transmission capacity of power system and the security of power systerm opration become more and more serious. Power electronic controller based on turn-off power device is one of effctive technical solutions to these problems.IGBT(Insulated Gate Bipolar Transistor) has become one of popular power electronic devices.With the improvement of the IGBT's voltage and current ratings,they will be more popular in power electronic controllers.Therefore,IGBT's driver and protection for high power application have been catching more and more attention of researchers and engineers.Some basic knowledge about configuration and characteristics of the third generation IGBT are present firstly.The parasitical circuit and the gate characteristic of IGBT are emphasized at the beginning of this thesis.Based on the accumulated knowledge of IGBT's driver and protection,several driver and protection circuits and appropriative IGBT driver modules are reviewed and compared.The requirements for IGBT's driver and protection are shown too.The power circuit is composed of IGBT modules togher with others power devices.The parasitical inductance of power circuit must be reduced as much as possible.The necessity of appropriate layout is present and some examples of power circuit layout are shown.According to the requirement for driver and protection circuit and the backround of the engneering application,two driver and protection circuits are designed using M57962AL for two IGBT modules with different current ratings.For 10kV Static Synchronous Series Compensator,two layouts of power circuits are desighed using the technology of compact the bus bar.The experiments based on each power circuit are carried out to improve the design.During the experiment,the problems such as the waveform distortion because of the inappropriate connecting of driving lines,the difficulties of measure the turn-on waveforms,the waveform distortion due to the improper snubber circuit,are solved one by one.IGBT and the power circuits work correctly,the expected purposes are achieved.The experimatal results show that the driver and protection circuit works properly.
Keywords/Search Tags:IGBT, driver, protection, gate characteristics, M57962AL, power circuit
PDF Full Text Request
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