Design And Experimental Study Of Novel High Power Insulated Gate Bipolar Translator

Power device determines power electronics technology, the emergence of new power device always bring a revolution in power elect ronics technology. Insulated Gate Bipolar Transistor(IGBT) is the most valuable power device with high switching frequency, simple driving circuit, low drive power and other characteristics, it has been widely used in industrial electrical energy, new ene rgy generation, transmission and distribution, power quality, rail transportation, metallurgy, new energy vehicles, defense, smart grid and DC micro-grid and other industries. IGBT as a key member of power device, it applied to various industrial sectors i nvolving almost the national economy, and there is no doubt that it will become one of the important key technology of the 21 st century.This paper reviewed the development process and research status of IGBT, and experimental studied the 3300 V enhanced high-voltage IGBT by advanced design concept. Meanwhile, on the basis of the combination of the theory and practice, we proposed a novel high-speed IGBT and a novel high-conductivity IGBT, and comprehensive and deeply studied these two types of high-performance IGBT. The main content on high-voltage, high-speed and high-conductivity IGBT are outlined below.First, we designed a 3300 V enhanced high-voltage IGBT and verified it by experiment. From the introduction of the triangular relationship of the static characteristics, dynamic characteristics and reliability, we thoroughly studied the theoretical design, simulation design, process design, layout design and chip testing of the 3300 V enhanced high-voltage IGBT, and validated it by chip manufacturing experiment.Experimental study on enhanced high-voltage IGBT can be divided into theoretical design, including the breakdown voltage, threshold voltage, forward voltage drop, turn-off time; simulation and optimization design, including the breakdown characteristics, transfer characteristics, transmission characteristics, dynamic characteristics and reliability; process design, which is designed and optimized from simulation design; layout design, which is the wafer fabrication design; process testing, which tests process in the production line; chip testing, which validates correctness between the design and manufacture.Second, this paper presents a new high-speed IGBT. This IGBT forms an electronic channel to extract excess electron at collector side to achieve h igh-speed turn-off. Theoretical analysis shows that the principle of the blocking mechanism, dynamic mechanism and avalanche mechanism of the new high-speed IGBT has comparative advantage with the traditional field-stop IGBT(FS-IGBT). Simulation results show that the collector trench IGBT offers switching speed 49% faster than the conventional FS-IGBT, and the revised CT-IGBT offers 74% faster than that of the FS-IGBT with almost the same breakdown voltage, current density and threshold voltage, verified the proposed design.The end, this paper also presents a new enhanced high-conductivity IGBT(HC-IGBT). This IGBT is formed by a Schottky contact between the P-base and emitter metal, which forms a hole barrier to suppress hole current to achieve enhanced conductivity modulation effect. The main electrical characteristics of the HC-IGBT have been studied by simulation, including blocking characteristics, transfer characteristics, transfer characteristics, dynamic characteristics, turn-off losses, and Reverse Blocking Safe Operating Area(RBSOA). Simulation results show that the HC-IGBT provides current density 53% higher and turn-off losses 27% lower than the conventional FS-IGBT, and the revised HC-IGBT offers current density 76% and turn-off losses 34% lower higher than that of the FS-IGBT with nearly the same breakdown voltage and threshold voltage, thus validated the HC-IGBT design.Therefore, this paper not only designed and developed the 3300 V enhanced high-voltage IGBT, but also proposed two types of h igh-performance IGBT under the situation of foreign countries protect the core technology of the IGBT. It has a certain significance to grasp the true technology of IGBT.