Research Of The Rubrene Thin Film Transistors By Heterogeneous Inducing Growth

The organic thin film transistor(Organic Thin-Film Transistor,OTFT),is a kind of the field-effect transistor.Compared to the traditional amorphous silicon thin film transistor,it has many advantages,such as simple manufacturing process,low cost,easy integration,flexible substrate,and so on.And it has been widely used in the field of organic light-emitting diodes,sensors,organic logic circuits,etc.In this paper,we choose a heavily doped n-type silicon as substrate,choose SiO2 as insulating layer,to study the growth and properties of rubrene thin films which grown on SiO2 or para-hexaphenyl(p-6P)/ copper phthalocyanine(CuPc)by atomic force microscopy and X-ray diffraction using the method of vacuum deposition,and the growth of para-hexaphenyl and copper phthalocyanine thin films as heterogeneous layer.The model of growth and substability properties of rubrene thin films on SiO2 substrate were obtained and the rubrene thin films with highly ordered morphology and crystalline structure were obtained by heterogeneous induction of para-hexaphenyl / copper phthalocyanine.The device based on this high-quality film has the carrier mobility of 1.37×10-2 cm2/Vs,the threshold voltage of-12.87 V,and the current switch ratio of 105,lays the foundation for high-performance organic thin film transistor.Also,it has great prospect to grow rubrene using para-hexaphenyl / copper phthalocyanine as inducing layer in the aspect of organic light-emitting diodes in the future,especially in high performance flexible display.