| Thin film diode and thin film transistors with vertical structure are fabricated by magnetron sputtering and vacuum evaporation in this paper.ZnPc thin film diodes and transistors,PbPc thin film diodes and transistors,and ZnPc / PbPc mixed thin film diodes and transistors are fabricated successfully.The blending film is an organic eutectic film with two components of ZnPc and PbPc,it has special molecular packing patterns and structures,which makes the eutectic film not only retains the characteristics of any component,but also shows better photoelectric characteristics than single component.Compared to the single type devices of phthalocyanine,it can broaden the visible light absorption range and improving internal carrier transport in devices,so that the device has more excellent photoelectric characteristics and carrier transfer characteristics.In this paper,the organic thin film devices with mixed ratio of 1:1 were major studied.The organic thin film devices were tested by dual beam ultraviolet visible photometer,atomic force microscope,step tester and other testing instruments for testing the characteristics of I-V.By comparing different types of organic thin film devices,it is found that the trap energy of the ZnPc / PbPc mixed thin devices with mixed ratio of 1:1 is less,and the device has better output characteristics.The physical characterization results can be found that the absorption spectrum range of the ZnPc / PbPc mixed film with mixed ratio of 1:1 is 280-900 nm,and the largest absorption rate at 341 nm and the absorption rate is 0.677.The mixed film belongs to amorphous form,and the evaporation rate of the mixed organic film is 5.4nm/min.The AC characteristic test,photoelectric test and capacitance voltage test of the ZnPc / PbPc mixed thin film diode with mixed mass ratio of 1:1 are carried out.Through the test results can be found that the mixed mode with mixed mass ratio of 1:1 is more suitable to model of AC diode,the input frequency higher,the output current bigger,and the fill factor FF light-electric conversion efficiency ?,VTH threshold voltage and carrier concentration NP of photodiode are calculated.At the same time,the current-voltage characteristic test of the ZnPc / PbPc mixed thin film diode with mixed mass ratio of 1:1 are carried out.Through the test results can be found that the current is about 0.2m A when VDS is 3V and VGS is 0.2V,the carrier concentration NP of devices is 2.49×1015/cm3,the conductivity ? is 2.5×10-9S/cm and the mobility ? is 6.28×10-6cm2/Vs,and the transistor parameters is calculated,including the transconductance,the output resistance and the amplification,and the degraded mechanism of the device is also analyzed. |
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