Research On The Key Technology For Preparing High Aspect Micro And Nano Structures

In recent years,based on the high aspect ratio micro-nano structures have a rapid development,it have been widely used in nano-optics,MEMS,quantum computers and other fields,but with the increasing aspect ratio of micro-nano structures,especially for large-area dense nano structures,the fabrication becomes more and more difficult.In this paper,the fabrication technology of micro-nano structures with high aspect ratio are studied by the proximity effect of electron beam lithography and by the adhesion and collapse of the resist structures.By using geometric correction technology to modify the layout of the design pattern,and using electron beam proximity effect correction software to optimize the electron beam exposure dose,due to the proximity effect of electron beam lithography generated by pre-scattered electrons and backscattered electrons are effectively overcome.By using the development technique of adding 4% NaCl to the conventional developer MF-CD26 of electronic resist HSQ,the contrast ratio of HSQ graphic structure is improved effectively,and the mechanism of action between NaCl and HSQ is analyzed.By analyzing the stress of the resist pattern structure and using supercritical CO2 drying technology,the collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension are suppressed.The large-area dense nano structures graphics with aspect ratio of 12:1 and the good steep sidewall is obtained.By studying the reverse DC pulse electroplating technology,the growth of gold particles during plating process is effectively suppressed,the surface smoothness and the density of the gold coating are improved,and we complete the graphics transfer.