Study Of Proximity Effect Correction In Electron-Beam Lithograph Based On Parallel Computing

The trend of IC characteristic line width decreasing and the request of three-dimensional structure produced by MEMS technology, need to compensate the proximity effect caused by electron scattering in electron-beam lithography, in order to obtain sufficient graphic precision. Because of electron-beam lithography test expensive, time-consuming, requiring use of computer simulation technology, simulations of proximity effect correction and electron beam lithography graphics will save time consumption and reduce test cost.This dissertation has conducted the research on proximity effect correction in making IC mask used electron-beam technology and making three-dimensional microstructure in MEMS. The paper prime tasks concentrate in the two-dimensional electron-beam proximity effect correction technology research, the three-dimensional electron-beam simulation model establishment, the three-dimensional proximity effect correction technology algorithm research and the parallelization. The prime tasks summary is as follows:1. Proximity effect correction technology research in making IC maskIn the two-dimensional electron-beam technology for manufacture of IC mask, against computing time space costly problems, used CDF function, IMR and vertex rectangle replacement method, large pixel approximation methods comprehensive solution to accelerate the speed of correction. In this methods received good experimental results in two-dimensional electron-beam proximity effect Correction.2. The 3-D electron-beam simulation model and 3-D proximity effect correction technologyIn the MEMS technology electron-beam technology is used to make three-dimensional microstructures. For the three-dimensional electron-beam proximity effect correction, by studying of the variation of energy deposition in resist, using layered three-dimensional energy deposition distribution model to achieve a three-dimensional simulation of electron beam lithography, carried out three-dimensional proximity effect correction base on this model. Experimental results shows that layered three-dimensional energy deposition distribution model obtained a more accurate simulation for energy deposition in three-dimensional electron-beam lithography and got good results for proximity effect correction.3. The parallel algorithm of three-dimensional proximity effect correctionAgainst the problems of the long time consuming and huge memory consuming in three-dimensional proximity effect correction, proposed a parallel three-dimensional proximity effect correction algorithm, used parallel computing and reasonable calculation of three-dimensional segmentation to get the energy deposition density, speed up the proximity effect correction rate. The parallel correction algorithm provides a new way of thinking for large-scale proximity effect correction calculation.