Study On Monte Carlo Simulation Of Electron Beam Lithography And Proximity Effect Correction Technique

The micro electro mechanical system(MEMS) is a new developed subject with a broad range in applications, and microfabrication process sequences is a key technology for the realization of the MEMS. However, the precision of the all availability of technologies today of three-dimensional micro-fabrication is lower and only submicron resolution can be achieved. In order to satisfy the rapid progress of the MEMS, higher precision micro-fabrication methods should be developed.Electron beam lithography(EBL) is considered as the best technique to offer the higher patterning resolution, and it is generally used to super microfabrication with resolution 0.1～0.5μm. Now it is mainly used to make precise masks and can't produce real 3-D microstructures. In lab, Electron beam (EB) can be focused on the range of less than 2nm, and the EBL has been used to exposure nanometer figures. The EB has many advantages, such as short wavelength, easily to be controlled, high precision and flexible, etc. The novel techniques about electron-beam lithography have been investigated in this thesis. The techniques are able to produce three-dimensional structure with high precision directly in base plate, such as vertical, curvilinear and micro tip array, and so on. The electron-beam lithography and the reason of proximity effect have been investigated by the Monte Carlo simulation method. The main works of this dissertation include the computer simulation of electron beam lithography, the optimization of the exposure conditions, the relations among the incidence energy, dose with depth and resolution, reason of proximity effect and the development of the software for correcting proximity effect. The main achievements can be summed up as follows:1. The complex scattering process of the low-energy electron beams in resist and substrate is simulated by a Monte Carlo method. Considering the...