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Study Of Proximity Effect Correction In Electron-beam Lithograph

Posted on:2011-10-09Degree:MasterType:Thesis
Country:ChinaCandidate:Z Y ZhaoFull Text:PDF
GTID:2198330338493318Subject:Computer technology
Abstract/Summary:PDF Full Text Request
Microfabrication technology has so far been the primary enabling technology for VLSI. With the continuous reduction of the Integrate Circuit critical dimension, and development of fabricating three- dimensional microstructures, it leads to increasing demand for higher resolution. Electron beam lithography (EBL) has consolidated as one of the most common techniques for microfabrication, while electron scattering caused insufficient graphic precision. Hence, the proximity effect correction is key elements in EBL lithography.This thesis takes an overall look at proximity effect issue in 2-D lithography and 3-D microstructures fabrication. Based on mathematical analysis and research, a 2-D proximity effect correction algorithm is proposed and implemented, and a 3-D electron-beam simulation model is designed and analyzed. The tasks are organized as follows:1. The 2-D proximity effect correction technologyIn the 2-D electron beam lithography technology, mechanism of proximity effect is considered. For the speed of correction method, the proximity effect of internal, mutual and complex lithography graphics is discussed, an improved correction method is proposed. This method accelerate the speed of correction, is proved by achieving good experimental results.2. Proximity correction of L and T shaped patterns are further dissected. The software of correction method is designed and implemented. The simulation results showed the precision meets the requirement of lithography graphics.3. Using accumulated sum of energy deposition method in the local exposure window, compared to convolution method, results of simulation show the faster performance under the defined precision requirement.4. The 3-D electron-beam simulation model Based on analysis of electron scattering scheme in 3-D resist, using Monte Carlo simulation experiment to achieve 3-D energy deposition distribution, a layered 3-D electron beam model is proposed and analyzed performance. The simulation of 3-D microstructures show good result by using layered computing algorism and repeat cumulative scanning scheme.
Keywords/Search Tags:Electron-beam Lithography, Distribution of Energy Deposition, Proximity Effect Correction, Hierarchical Simulation
PDF Full Text Request
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