The Research On The Performance Of Junctionless Field Effect Transistor

According to Moore's Law(the number of transistors that can be accommodated on an integrated circuit will double by every 18 months),the size of the basic unit MOSFETs of the integrated circuit will be smaller and smaller.Followed by not only in the production process to increase the difficulty,the short channel effect is also increasingly prominent,and the power consumption is also growing.Therefore,a novel transistor——Junctionless Field Effect Tansistor is widely proposed that the source and drain channels of the device have the same doping type and doping concentration,along the channel direction,not a "knot" in the MOSFET,greatly saving the annealing technology,reducing the production costs.The results show that the junctionless effect transistor has the advantages of high switching ratio,high channel mobility and low subthreshold slope,and effectively suppresses the short channel effect.In order to understand the basic characteristics of the junctionless field effect transistor and the related factors which affect its performance,firstly,the paper introduces the basic structure and conduction principle of the junctionless field effect transistor.Secondly,the simulation software SILVACO and the related knowledge of SOI are briefly described.Finally,the factors influencing the performance of the junctionless field effect transistor are analyzed from several aspects,including the heterogeneity of the doped silicon nanowires,the asymmetry of the thickness of the oxides,the external voltage of the SOI and the thickness of the SOI.Using SILVACO semiconductor simulation software,taking three-dimensional gate and double-gate structure as examples,simulate the three schemes.And the characteristics of sub-threshold swing,carrier concentration,electric field intensity,forward drive current and reverse leakage current are analyzed by analyzing the simulation results,and the key factors affecting its performance are obtained.