Design And Achievement Of Metal Electrode Structure And Technology For LDMOS Power Transistor

The LDMOS power devices are applied to radar for exploration field,for example:aircraft radar,ship-based radar,phased array radar,etc.The metal electrode in a chip is a key component of the LDMOS power device because it is the channel of work current and microwave signal and its quality effects on performance of the LDMOS device.This paper focuses on the metal electrode the complete production process,and using a sputtering process to achieve the layer deposition of metals.LDMOS chips were manufactured with the production process of the metal electrode,and assembled in a power device.First,it described in detail by silicide contrast experiment.Comparative experiments get CoSi2 best crafismanship and its target of(1?3)sheet resistance.And,study of barrier layers in multilayer metal,using the principle of reactive magnetron sputtering deposition of tungsten nitride,and t i tanium nitride films,and compare their properties,select practical results of thin films Various integrated thin film properties,tungsten nitride electrical resitivity of less than 200??·cm is selected as a barrier.Second,double-layer metal wiring technology is discussed.The LDMOS device in this paper is tested through manufacture procedure,the measured results show that the device can deliver 350W output power over a(485?606)MHz band at 20ms pul se width,35.7%duty cycle,36V operate voltage,with more than 17dB power gain and 52%drain efficiency.