Simulation And Research Of Single Event Effect Based On The Advanced Semiconductor Devices

Modern integrated circuit as the core of electronic equipments has obtained the widespread application,its stability has been getting attention from all desingers and researchers.With integrated circuit technology feature sizes shrinking,especially at the advanced nodes,using advanced Tri-Gate structure,the Fin FET structure device guarantee the whole integrated circuit industry follows the Moore's law of development and progress,during this last 50 years.The transferring of devices' structure from plane structure at large size process node to the new 3-d structure,this kind of change along with the progress of design and manufacturing process,making previously ignored the single event effect on the integrated circuit of the impact and damage increased.The focus of this paper is based on the modern integrated circuit manufacturing process steps,through the integrated circuit computer process simulation,based on the existing part of the data,build a Tri-Gate 28 nm process node structure of N-type FinFET device,and based on the process model of FinFET device,we check the widely used SRAM circuits through device-circuit hybrid simulation,and then simulate other harden structures SRAM circuit under the advanced technology nodes for single event effect.The results on advanced technology process node and advanced structure of SRAM circuit resistance single event effect and reinforcement has a certain guiding significance.This article covers the main job: 1.This article will use the Synopsys.Inc TCAD process suite of SProcess process simulation software,on the basis of the existing part FinFET device parameters,bulide an SRAM cell circuit based on 6 transistors 25 nm channel length N-type FinFET threedimensional device model.Then we simulate the FinFET device electrical performance and compared with the same process model from Intel.Inc.2.Research on different factors for single event effect for Fin FET device.This is the follow-up FinFET device-circuit hybrid simulation's research foundation.In this article,the Fin FET device is sensitive to different storage nodes,different external voltage offset,different devices external power supply voltage for single event effect of feedback and influence.3.Through advanced semiconductor devices-circuit hybrid circuit simulation,we on builds TCAD + mixed SPICE simulation platform on Linux system.In the hybrid simulation,we control the linear energy transfer(LET),and analysis of six standard SRAM cell circuit for single event upset(SEU)threshold voltage,and by strengthening the circuit structure,we analysis of 10-transistors SRAM cell circuit,and dual interlock storage(DICE)structure and other advanced circuit under the influence of single event effect.4.The single event transient(SET)is a single event effect for high frequency integrated circuit,this paper will be based on the analysis of carrier transport situation,in view of the transient impulse current effect,analysis the reason,build the mathematic model,and corresponding fitting parameters,to strengthen the advanced technology nodes and advanced single event effect resistance level circuit structure reinforcement technology research is of certain significance.