Research And Design Of Ku Band Transceiver Front-end Chip Based On SiGe BiCMOS Technology

With the flexible wave velocity formation mechanism,Phased array radar is capable of tracking and detecting effectively.This features make it has a high military strategic significance.And the T/R front is a key component of phased array radar.Its performance determines the significant technical indexes such as the speed of the phased array radar,the transmission power and the receiving sensitivity.At present,the improvement of radar performance demand its corresponding transceiver front-end of low cost,low power consumption,light weight and miniaturization of the direction.This paper demonstrates a fully integrated Ku-band multifunctional chip based on GF 0.13 SiGe BiCMOS technology at full temperature(-55?~125?),which solves the problem of temperature drift in Si Ge Bi CMOS process.In this paper,the advantages and disadvantages of several existing semiconductor integrated processes are analyzed and compared.It is pointed out that the Si Ge BiCMOS process has the advantages of both performance,cost and integration.Currently,it's a good choice to design the front-end integrated chip.The chip is composed of eight modules: 6-bit attenuator(ATTR),6-bit phase shifter(PS),low noise amplifier(LNA),power amplifier(PA),current source,single pole double throw switch(SPDT),single pole three throw switch(SP3T)and the steering control module.This paper has complete the design of the modules,systematic simulation and layout design.The chip is ready to be taped out.The main study content are as follows:Firstly,to realize the work ability of the chip at full temperature: improving current source feed module to reduce the transistor temperature drift effect which deteriorate the gain of amplifier;add the temperature compensation circuit to improve the gain flatness of the system under high-low temperature working condition.Secondly,to achieve receiving and transmission channel switching of the chip,which can be programmed to precisely control,this paper design three switches to switching receiving and transmission channel,and add the switch module in each amplifier to improve the isolation between the receiving and transmission channel.Thirdly,a low noise amplifier and the power amplifier are designed.Besides,this paper complete the simulation of not only the unit circuit but also the system-level circuit.The chip is passed the Design Rule Check(DRC)and the Layout Versus Schematic(LVS).At the high-low temperature,the noise figure of the receiving channel is not more than 5d B,the transceiver channel gain is greater than 20 dB.Fourthly,this paper had design a high-precision 6-bit attenuator.Based on the original circuit structure,add the compensation circuit of the insert phase and temperature.At high-low temperatures,the insert phase variation is less than 5 degrees,and the attenuation root mean square error(RMS)is less than 0.8dB,and input/output return loss are more than 14 dB.