Design And Implementation Of A 2-20GHz Multifunction Chip With Bilateral Amplifier And Digital Attenuator

With the rapid development of electronic information technology,the size requirements of modern electronic systems for components are getting smaller and smaller,but the performance requirements are getting higher and higher.It is necessary to realize the miniaturization of electronic systems and meet the application of ultra-wideband and high performance.Requirements,especially in radar broadband detection,high-speed electronic countermeasures,multi-function communication and guidance system applications,the development of ultra-wideband multi-function chips has important application value and urgent needs.Among the common ultra-wideband amplifiers,amplifiers designed with distributed structure have ultra-wideband frequency characteristics,and the circuit performance is relatively less affected by process fluctuations.Compared wit h broadband amplifiers of other structures,it has better gain flatness and Standing wave.The multi-function chip manufacturing process is divided into Si CMOS,Si Ge Bi CMOS and Ga As p HEMT.The three processes have their own advantage and have good performance in the field of microwave and millimeter wave multi-function chips.At present,Ga As MMIC(Monolithic Microwave Integrated Circuit)technology is becoming more and more mature.With its high-performance advantages in the field of RF and microwave,Ga As chips have always occupied an important field of high-end RF applications.With the continuous optimization of semiconductor technology and semiconductor materials,as well as the traction of user demand,Ga As chips can now achieve on-chip integration of multiple functions,and specific E/D processes can complete some digital logic functions on the Ga As MMIC.It plays an important role in improving chip integration.A 2-20 GHz multi-function chip with bilateral amplifier and digital attenuator is developed in this work.The Ga As PED25 process is used for tape out.The specific work content is divided into the following parts: 1.The design method of the ultra-wideband distributed low-noise amplifier is studied,the advantages and disadvantages of the cascode structure distributed amplifier and the noise source are discussed.A 2-20 GHz distributed low-noise amplifier is verified by on-wafer test,gain>15d B,noise figure<3d B,output P-1d B power>14d Bm.2.The topology structure and common design methods of the switch circuit is studied,the equivalent circuit of the transistor in the switch mode is analyzed.A DC-20 GHz single-pole double-throw switch is designed.It has passed the on-wafer test,the insertion loss <1.8d B,isolation >45d Bm.3.The digital attenuator topological structure and design method is researched.And compared the applied range of several common attenuator structure.A DC-20 GHz 6bit digital attenuator is designed.The on-wafer test shows,the insertion loss is 6.1d B,attenuation accuracy is 0.5d B,attenuation additional phase shift is ±4°.4.Finally,we discussed the current development direction of Ga As multi-function chips and the main difficulties encountered.Then we carried out the design of a 2-20 GHz multi-function chip with bilateral amplifier and digital attenuator.It is on-wafer tested after tape-out.The channel gain is greater than 12 d B,the in-band flatness is 1d B,the return loss is between-10 d B?-15 d B,and the power consumption is 127 m A@+5V.